Byrne, Conor, Brady, Anita
ORCID: 0000-0002-9257-6837, Walsh, Lee, McCoy, Anthony, Bogan, Justin, McGlynn, Enda
ORCID: 0000-0002-3412-9035, Vijayaraghavan, Rajani K.
ORCID: 0000-0003-1096-448X and Hughes, Greg
ORCID: 0000-0003-1310-8961
(2016)
Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal.
Thin Solid Films, 599
.
pp. 59-63.
ISSN 0040-6090
Abstract
A copper-aluminium (CuAl) alloy (90% : 10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/ SiO2/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO2 interface. Electrical four point probe measurements indicates that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk.
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