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Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper

Vijayaraghavan, Rajani K. orcid logoORCID: 0000-0003-1096-448X, Daniels, Stephen, McGlynn, Enda orcid logoORCID: 0000-0002-3412-9035, Gandhiraman, Ram Prasad, Groarke, Robert and McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121 (2012) Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper. Materials Letters, 71 . pp. 160-163. ISSN 0167-577X

Abstract
We report on the direct formation of phase pure nanocrystalline cuprous oxide (Cu2O) film with band gap ~ 2 eV by microwave plasma oxidation of pulsed dc magnetron sputtered Cu films and the highly controlled oxidation of Cu in to Cu2O and CuO phases by controlling the plasma exposure time. The structural, morphological and optoelectronic properties of the films were investigated. p-type Cu2O film with a grain size ~20-30 nm, resistivity of ~66 Ω cm and a hole concentration of ~2×1017 cm-3 is obtained for a plasma exposure time of 10 min without using any foreign dopants. The optical absorption coefficient (~105 cm-1) of the Cu2O film is also reported.
Metadata
Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:Solar energy materials; Oxidation
Subjects:Engineering > Materials
Physical Sciences > Spectrum analysis
Physical Sciences > Nanotechnology
Physical Sciences > Chemistry
Physical Sciences > Semiconductors
DCU Faculties and Centres:Research Initiatives and Centres > National Centre for Plasma Science and Technology (NCPST)
DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:Elsevier
Official URL:http://dx.doi.org/10.1016/j.matlet.2011.12.044
Copyright Information:© 2012 Elsevier
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:19629
Deposited On:08 Nov 2013 11:32 by Enda Mcglynn . Last Modified 09 Jun 2020 16:11
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