Horan, Ken, Lankinen, Aapo, O'Reilly, Lisa, Bennett, N.S., McNally, Patrick J. ORCID: 0000-0003-2798-5121, Sealy, B.J., Cowern, N.E.B. and Tuomi, Tiinamaija (2008) Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B, 154-15 . pp. 118-121. ISSN 0921-5107
McNally, Patrick J. ORCID: 0000-0003-2798-5121, Kanatharana, Jarujit, Toh, B.H.W., McNeill, D.W., Danilewsky, Andreas N., Tuomi, Tiinamaija, Knuuttila, L., Riikonen, J., Toivonen, J. and Simon, R. (2004) Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. Journal of Applied Physics, 96 (12). ISSN 0021-8979
Murphy, G., Whelan, Paul F. ORCID: 0000-0001-9230-7656, McNally, Patrick J., Tuomi, Tiinamaija and Simon, R. (2004) The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendell¨osung fringe analysis in X-ray topography. European Physical Journal - Applied Physics (The), 27 (1-3). pp. 443-446. ISSN 1286-0042
McNally, Patrick J. ORCID: 0000-0003-2798-5121, Rantamäki, R., Tuomi, Tiinamaija, Danilewsky, Andreas N., Lowney, Donnacha, Curley, John W. and Herbert, P.A.F. (2001) Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography. IEEE Transactions on Components and Packaging Technologies, 24 (1). pp. 76-83. ISSN 1521-3331
McNally, Patrick J. ORCID: 0000-0003-2798-5121, Dilliway, G., Bonar, J.M., Willoughby, A., Tuomi, Tiinamaija, Rantamäki, R., Danilewsky, Andreas N. and Lowney, Donnacha (2000) On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure. Applied Physics Letters, 77 (11). ISSN 0003-6951
Rantamäki, R., Tuomi, Tiinamaija, Zytkiewicz, Z.R., Domagala, J. and McNally, Patrick J. ORCID: 0000-0003-2798-5121 (1999) Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics, 86 (8). ISSN 0021-8979
McNally, Patrick J. ORCID: 0000-0003-2798-5121, Tuomi, Tiinamaija, Herbert, P.A.F., Baric, Adrijan, Äyräs, P., Karilahti, M., Lipsanen, H. and Tromby, M. (1996) Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's. IEEE Transactions on Electron Devices, 43 (7). pp. 1085-1091. ISSN 1085-1091
McNally, Patrick J. ORCID: 0000-0003-2798-5121, Herbert, P.A.F., Tuomi, Tiinamaija, Karilahti, M. and Higgins, J.A. (1996) Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes. Journal of Applied Physics, 79 (11). ISSN 0021-8979