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Number of items: 8.

Tanner, Brian K. orcid logoORCID: 0000-0002-1474-177X, McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121 and Danilewsky, Andreas N. (2021) X-ray imaging of silicon die within fully packaged semiconductor devices. Powder Diffraction, 36 (2). pp. 78-84. ISSN 0885-7156

Tanner, Brian K. orcid logoORCID: 0000-0002-1474-177X, Vijayaraghavan, Rajani K. orcid logoORCID: 0000-0003-1096-448X, Roarty, Billy, Danilewsky, Andreas N. and McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121 (2019) In-operando X-ray diffraction imaging of thermal strains in fully packaged silicon devices. Microelectronics Reliability, 99 . pp. 232-238. ISSN 0026-2714

Wong, Chiu Soon, Bennett, N.S., Manessis, D., Danilewsky, Andreas N. and McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121 (2014) Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages. Microelectronic Engineering, 117 . pp. 48-56. ISSN 0167-9317

Allen, David, Stopford, Jennifer, Wittge, Jochen, Danilewsky, Andreas N. and McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121 (2011) Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon. Journal Of Applied Crystallography, 44 (3). pp. 526-531. ISSN 0021-8898

Allen, David, Wittge, Jochen, Zlotos, A., Gorogostegui-Coinas, E., Garagorri, J., McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121, Danilewsky, Andreas N. and Elizalde, M.R. (2010) Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-raman spectroscopy and white beam x-ray topography. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, 268 (3-4). pp. 383-387. ISSN 0168-583x

McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121, Kanatharana, Jarujit, Toh, B.H.W., McNeill, D.W., Danilewsky, Andreas N., Tuomi, Tiinamaija, Knuuttila, L., Riikonen, J., Toivonen, J. and Simon, R. (2004) Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. Journal of Applied Physics, 96 (12). ISSN 0021-8979

McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121, Rantamäki, R., Tuomi, Tiinamaija, Danilewsky, Andreas N., Lowney, Donnacha, Curley, John W. and Herbert, P.A.F. (2001) Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography. IEEE Transactions on Components and Packaging Technologies, 24 (1). pp. 76-83. ISSN 1521-3331

McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121, Dilliway, G., Bonar, J.M., Willoughby, A., Tuomi, Tiinamaija, Rantamäki, R., Danilewsky, Andreas N. and Lowney, Donnacha (2000) On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure. Applied Physics Letters, 77 (11). ISSN 0003-6951

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