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Development and optimisation of a novel SiO2 PVD technique based on the thermal decomposition of PDMS

Cannon, Paul orcid logoORCID: 0000-0001-6453-1466, McGlynn, Enda orcid logoORCID: 0000-0002-3412-9035, Freeland, Brian orcid logoORCID: 0000-0003-3705-5745 and Gaughran, Jennifer orcid logoORCID: 0000-0002-3659-036X (2023) Development and optimisation of a novel SiO2 PVD technique based on the thermal decomposition of PDMS. New Journal of Chemistry, 47 . pp. 3734-3744. ISSN 1144-0546

Abstract
This work reports the development of a novel and facile physical vapour deposition (PVD) system for SiO2 deposition with a wide and controllable range of final film thicknesses. An investigation of the steady-state deposition temperature, heating rate, and PDMS source mass dependence of the deposited SiO2 layer thickness was performed using a variety of experimental techniques. SiO2 layers were characterised by scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), x-ray photoelectron spectroscopy (XPS), grazing incidence attenuating total reflection Fourier transform infrared spectroscopy (GATR-FTIR), contact profilometry (CP), and white light profilometry (WLP). It was found that the thickness of the SiO2 layer was linearly proportional to the PDMS source mass for large source masses with a nonlinear (parabolic) relationship for smaller source masses, but a non-monotonic relationship was observed between thickness and source material heating rate. The steady-state deposition temperature above the decomposition threshold did not directly affect layer thickness within the range investigated but, the lower the temperature, the greater the film uniformity.
Metadata
Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:SiO2, PMDS, PVD
Subjects:Physical Sciences > Chemistry
Physical Sciences > Nanotechnology
Physical Sciences > Spectrum analysis
Physical Sciences > Thin films
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Research Initiatives and Centres > National Centre for Plasma Science and Technology (NCPST)
Publisher:Royal Society of Chemistry
Official URL:https://dx.doi.org/10.1039/d2nj05886c
Copyright Information:© 2023 The Authors.
Funders:Irish Research Council under the Government of Ireland Postgraduate Scholarship Programme [grant number: GOIPG/2021/ 379]
ID Code:28189
Deposited On:24 Mar 2023 17:08 by Enda Mcglynn . Last Modified 21 Nov 2023 11:25
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