Login (DCU Staff Only)
Login (DCU Staff Only)

DORAS | DCU Research Repository

Explore open access research and scholarly works from DCU

Advanced Search

Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

Byrne, Conor, Brady, Anita orcid logoORCID: 0000-0002-9257-6837, Walsh, Lee, McCoy, Anthony, Bogan, Justin, McGlynn, Enda orcid logoORCID: 0000-0002-3412-9035, Vijayaraghavan, Rajani K. orcid logoORCID: 0000-0003-1096-448X and Hughes, Greg orcid logoORCID: 0000-0003-1310-8961 (2016) Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal. Thin Solid Films, 599 . pp. 59-63. ISSN 0040-6090

Abstract
A copper-aluminium (CuAl) alloy (90% : 10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/ SiO2/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO2 interface. Electrical four point probe measurements indicates that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk.
Metadata
Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:Aluminium; Copper; Self-forming barrier; CuAl alloy; XPS; XRD
Subjects:Engineering > Materials
Physical Sciences > Spectrum analysis
Physical Sciences > Nanotechnology
Physical Sciences > Chemistry
Physical Sciences > Crystallography
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > National Centre for Plasma Science and Technology (NCPST)
DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:Elsevier
Official URL:http://dx.doi.org/10.1016/j.tsf.2015.12.056
Copyright Information:© 2016 Elsevier
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:21116
Deposited On:24 Mar 2016 11:44 by Enda Mcglynn . Last Modified 09 Jun 2020 16:05
Documents

Full text available as:

[thumbnail of Thin Solid Films, 599 (2016) 59–63]
Preview
PDF (Thin Solid Films, 599 (2016) 59–63) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
1MB
Downloads

Downloads

Downloads per month over past year

Archive Staff Only: edit this record