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The Hg isoelectronic defect in ZnO

Cullen, Joseph, Johnston, K., Dunker, D., McGlynn, Enda orcid logoORCID: 0000-0002-3412-9035, Yakovlev, D.R., Bayer, M. and Henry, Martin O. (2013) The Hg isoelectronic defect in ZnO. Journal of Applied Physics, 114 (19). p. 193515. ISSN 0021-8979

Abstract
We report a study of the luminescence due to Hg in ZnO, concentrating on the main zero phonon line (ZPL) at 3.2766(1) eV and its associated phonon sidebands. For a sample implanted with radioactive 192Hg, the ZPL intensity, normalised to that of shallow bound exciton emission, is observed to decrease with an equivalent half-life of 4.5(1) h, very close to the 4.85(20) h half-life of 192Hg. ZnO implanted with stable Hg impurities produces the same luminescence spectrum. Temperature dependent measurements confirm that the zero phonon line is a thermalizing doublet involving one allowed and one largely forbidden transition from excited states separated by 0.91(1)meV to a common ground state. Uniaxial stress measurements show that the allowed transition takes place from an orbitally degenerate excited state to a non-degenerate ground state in a centre of trigonal (C3v) symmetry while the magneto-optical properties are characteristic of electron-hole pair recombination at an isoelectronic defect. The doublet luminescence is assigned to bound exciton recombination involving exchange-split gamma5 and gamma1,2 excited states (using C6v symmetry labels; gamma3 and gamma1,2 using C3v labels) at isoelectronic Hg impurities substituting for Zn in the crystal. The electron and hole g values deduced from the magneto-optical data indicate that this Hg impurity centre in ZnO is hole-attractive.
Metadata
Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:Excitons; Photoluminescence; Crystal defects; Phonons
Subjects:Physical Sciences > Spectrum analysis
Physical Sciences > Semiconductors
DCU Faculties and Centres:Research Initiatives and Centres > National Centre for Plasma Science and Technology (NCPST)
DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.4832458
Copyright Information:© 2013 AIP
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:19673
Deposited On:26 Nov 2013 10:02 by Enda Mcglynn . Last Modified 19 Mar 2019 14:30
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