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Photoluminescence due to Group IV impurities in ZnO

Cullen, Joseph, Johnston, K., Henry, Martin O. and McGlynn, Enda orcid logoORCID: 0000-0002-3412-9035 (2012) Photoluminescence due to Group IV impurities in ZnO. Proceedings of MRS Fall Meeting 2011, 1394 . mrsf11-1394. ISSN 1946-4274

Abstract
We report the results of photoluminescence measurements on ZnO bulk crystals implanted with both stable and radioactive species involving the group IV impurities Ge, Si and Sn. We previously confirmed the identity of a line emerging at 3.3225 eV as being related to Ge and present here uniaxial stress data which show that the defect responsible has trigonal symmetry. Experiments with Si provide circumstantial evidence of a connection with the well-known line at 3.333 eV. Our measurements indicate that for the case of Sn on the Zn site luminescence is not observed. We also confirm that the I9 and I2 lines are due to substitutional In impurities.
Metadata
Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:ZnO bulk crystals; Photoluminescence
Subjects:Physical Sciences > Spectrum analysis
Physical Sciences > Photonics
Physical Sciences > Semiconductors
DCU Faculties and Centres:Research Initiatives and Centres > National Centre for Plasma Science and Technology (NCPST)
DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:Materials Research Society
Official URL:http://www.mrs.org/links/CJOLink.aspx?id=214748376...
Copyright Information:© 2012 MRS
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:19628
Deposited On:08 Nov 2013 11:24 by Enda Mcglynn . Last Modified 19 Mar 2019 14:32
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