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Highly conductive Sb-doped layers in strained Si

Bennett, N.S., Cowern, N.E.B., Smith, A.J., Gwilliam, R.M., Sealy, B.J., O'Reilly, Lisa, McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121, Cooke, G. and Kheyrandish, H. (2006) Highly conductive Sb-doped layers in strained Si. Applied Physics Letters, 89 (18). ISSN 0003-6951

Abstract
The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices
Metadata
Item Type:Article (Published)
Refereed:Yes
Subjects:Engineering > Electronics
Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.2382741
Copyright Information:©2006 American Institute of Physics
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:195
Deposited On:06 Feb 2008 by DORAS Administrator . Last Modified 16 Jan 2019 13:44
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